Hussain, Muhammad and Jaffery, Syed Hassan Abbas and Ali, Asif and Nguyen, Cong Dinh and Aftab, Sikandar and Riaz, Muhammad and Abbas, Sohail and Hussain, Sajjad and Seo, Yongho and Jung, Jongwan (2021) NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode. Scientific Reports, 11 (1). ISSN 2045-2322
Full text not available from this repository.Abstract
Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future
electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2
van der waal heterojunction (vdW HJ). A substantial increase in rectifcation behavior was observed
when the devices were subjected to gate bias. The highest rectifcation of~ 1 × 104
was obtained
at Vg = − 40V. Remarkable rectifcation behavior of the p-n diode is solely attributed to the sharp
interface between metal and GeSe/MoSe2. The device exhibits a high photoresponse towards NIR
(850 nm). A high photoresponsivity of 465 mAW−1, an excellent EQE of 670%, a fast rise time of
180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D)
of 7.3 × 109
Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9× 1010W−1, and
the noise equivalent power (NEP) of 1.22× 10–13WHz−1/2. The strong light-matter interaction stipulates
that the GeSe/MoSe2 diode may open new realms in multi-functional electronics and optoelectronics
applications.
| Item Type: | Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering and Applied Sciences (FEAS) > Department of Electrical Engineering Islamabad |
| Depositing User: | Engr Sohail Abbas |
| Date Deposited: | 16 Apr 2021 07:19 |
| Last Modified: | 16 Apr 2021 07:19 |
| URI: | http://research.riphah.edu.pk/id/eprint/1366 |
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