Ultrafast and Highly Stable Photodetectors Based on p-GeSe/n-ReSe2 Heterostructures
- Amir Muhammad AfzalAmir Muhammad AfzalDepartment of Physics, Riphah International University, 13-km Raiwind Road, Lahore 54000, PakistanDepartment of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI−TPC IRC), Sejong University, Seoul 05006, KoreaMore by Amir Muhammad Afzal,
- Muhammad Zahir IqbalMuhammad Zahir IqbalNanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, PakistanMore by Muhammad Zahir Iqbal,
- Ghulam DastgeerGhulam DastgeerDepartment of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI−TPC IRC), Sejong University, Seoul 05006, KoreaMore by Ghulam Dastgeer,
- Ghazanfar NazirGhazanfar NazirDepartment of Chemistry, Inha University, 100 Inharo, Incheon 22212, KoreaMore by Ghazanfar Nazir, and
- Jonghwa Eom*Jonghwa Eom*Email: [email protected]Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI−TPC IRC), Sejong University, Seoul 05006, KoreaMore by Jonghwa Eom
Abstract
Two-dimensional transition-metal dichalcogenide (2D-TMD) semiconductors and their van der Waals heterostructures (vdWHs) have attracted great attention because of their tailorable band-engineering properties and provide a propitious platform for next-generation extraordinary performance energy-harvesting devices. Herein, we reported unique and unreported germanium selenide/rhenium diselenide (p-GeSe/n-ReSe2) 2D-TMD vdWH photodetectors for extremely sensitive and high-performance photodetection in the broadband spectral range (visible and near-infrared range). A high and gate-tunable rectification ratio (RR) of 7.34 × 105 is achieved, stemming from the low Schottky barrier contacts and sharp interfaces of the p-GeSe/n-ReSe2 2D-TMD vdWHs. In addition, a noticeably high responsivity (R = 2.89 × 105 A/W) and specific detectivity (D* = 4.91 × 1013 Jones), with good external quantum efficiency (EQE = 6.1 × 105) are obtained because of intralayer and interlayer transition of excitations, enabling the broadband photoresponse (λ = 532–1550 nm) at room temperature. Furthermore, fast response times of 16–20 μs are estimated under the irradiated laser of λ = 1550 nm because of interlayer exciton transition. Such a TMD-based compact system offers an opportunity for the realization of high-performance broadband infrared photodetectors.
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