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Ultrafast and Highly Stable Photodetectors Based on p-GeSe/n-ReSe2 Heterostructures

  • Amir Muhammad Afzal
    Amir Muhammad Afzal
    Department of Physics, Riphah International University, 13-km Raiwind Road, Lahore 54000, Pakistan
    Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI−TPC IRC), Sejong University, Seoul 05006, Korea
  • Muhammad Zahir Iqbal
    Muhammad Zahir Iqbal
    Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan
  • Ghulam Dastgeer
    Ghulam Dastgeer
    Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI−TPC IRC), Sejong University, Seoul 05006, Korea
  • Ghazanfar Nazir
    Ghazanfar Nazir
    Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea
  • , and 
  • Jonghwa Eom*
    Jonghwa Eom
    Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI−TPC IRC), Sejong University, Seoul 05006, Korea
    *Email: [email protected]
    More by Jonghwa Eom
Cite this: ACS Appl. Mater. Interfaces 2021, 13, 40, 47882–47894
Publication Date (Web):October 3, 2021
https://doi.org/10.1021/acsami.1c12035
Copyright © 2021 American Chemical Society
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Abstract

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Two-dimensional transition-metal dichalcogenide (2D-TMD) semiconductors and their van der Waals heterostructures (vdWHs) have attracted great attention because of their tailorable band-engineering properties and provide a propitious platform for next-generation extraordinary performance energy-harvesting devices. Herein, we reported unique and unreported germanium selenide/rhenium diselenide (p-GeSe/n-ReSe2) 2D-TMD vdWH photodetectors for extremely sensitive and high-performance photodetection in the broadband spectral range (visible and near-infrared range). A high and gate-tunable rectification ratio (RR) of 7.34 × 105 is achieved, stemming from the low Schottky barrier contacts and sharp interfaces of the p-GeSe/n-ReSe2 2D-TMD vdWHs. In addition, a noticeably high responsivity (R = 2.89 × 105 A/W) and specific detectivity (D* = 4.91 × 1013 Jones), with good external quantum efficiency (EQE = 6.1 × 105) are obtained because of intralayer and interlayer transition of excitations, enabling the broadband photoresponse (λ = 532–1550 nm) at room temperature. Furthermore, fast response times of 16–20 μs are estimated under the irradiated laser of λ = 1550 nm because of interlayer exciton transition. Such a TMD-based compact system offers an opportunity for the realization of high-performance broadband infrared photodetectors.

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The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c12035.

  • Thickness measurement of p-GeSe and n-ReSe2; mobilities of p-GeSe and n-ReSe2 devices with different electrodes; current–voltage curves of p-GeSe and n-ReSe2 FETs; energy band diagram of p-GeSe and n-ReSe2 TMD materials with different metal electrodes; change in barrier height with different metal contacts; key parameters of p-GeSe and n-ReSe2 photodetectors; Raman spectroscopy; optical, SEM, and cross-sectional TEM images of p-GeSe/n-ReSe2 2D-TMD vdWHs; transfer and current–voltage characteristics of p-GeSe/n-ReSe2 2D-TMD vdWHs at different temperatures; diode characterization with different thicknesses; photovoltaic parameters; photocurrent at different angles of incident light; and comparison of photovoltaic key parameters with previous reports (PDF)

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