Gate-Voltage-Modulated Spin Precession in Graphene/WS2 Field-Effect Transistors
1
Department of Physics & Astronomy, Graphene Research Institute—Texas Photonics Center International Research Center (GRI–TPC IRC), Sejong University, Seoul 05006, Korea
2
Department of Physics, Riphah International University, 13 Raiwind Road, Lahore 54000, Pakistan
3
Department of Electrical Engineering, Sejong University, Seoul 05006, Korea
*
Author to whom correspondence should be addressed.
Academic Editor: Alina Caddemi
Electronics 2021, 10(22), 2879; https://doi.org/10.3390/electronics10222879
Received: 17 October 2021
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Revised: 9 November 2021
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Accepted: 15 November 2021
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Published: 22 November 2021
(This article belongs to the Special Issue 10th Anniversary of Electronics: Recent Advances in Microelectronics and Optoelectronics)
Transition metal dichalcogenide materials are studied to investigate unexplored research avenues, such as spin transport behavior in 2-dimensional materials due to their strong spin-orbital interaction (SOI) and the proximity effect in van der Waals (vdW) heterostructures. Interfacial interactions between bilayer graphene (BLG) and multilayer tungsten disulfide (ML-WS2) give rise to fascinating properties for the realization of advanced spintronic devices. In this study, a BLG/ML-WS2 vdW heterostructure spin field-effect transistor (FET) was fabricated to demonstrate the gate modulation of Rashba-type SOI and spin precession angle. The gate modulation of Rashba-type SOI and spin precession has been confirmed using the Hanle measurement. The change in spin precession angle agrees well with the local and non-local signals of the BLG/ML-WS2 spin FET. The operation of a spin FET in the absence of a magnetic field at room temperature is successfully demonstrated.
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Keywords:
spintronics; spin-orbit interaction; Hanle spin precession; graphene; spin field-effect transistor
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MDPI and ACS Style
Afzal, A.M.; Khan, M.F.; Eom, J. Gate-Voltage-Modulated Spin Precession in Graphene/WS2 Field-Effect Transistors. Electronics 2021, 10, 2879. https://doi.org/10.3390/electronics10222879
AMA Style
Afzal AM, Khan MF, Eom J. Gate-Voltage-Modulated Spin Precession in Graphene/WS2 Field-Effect Transistors. Electronics. 2021; 10(22):2879. https://doi.org/10.3390/electronics10222879
Chicago/Turabian StyleAfzal, Amir M., Muhammad F. Khan, and Jonghwa Eom. 2021. "Gate-Voltage-Modulated Spin Precession in Graphene/WS2 Field-Effect Transistors" Electronics 10, no. 22: 2879. https://doi.org/10.3390/electronics10222879
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