Abstract
We successfully fabricated ZnO, Zn0.96Co0.04O, Zn0.95Co0.04Ce0.01O, Zn0.94Co0.04Ce0.02O, and Zn0.92Co0.04Ce0.04O nanoparticles and studied their room-temperature structure and magnetic properties. The X-rays diffraction (XRD) patterns of all the samples confirmed the presence of a wurtzite-type structure. XRD and Transmission Electron Microscopy (TEM) results showed that Zn2+ ions originally at tetrahedral sites were replaced by high-spin Co2+ and Ce3+ ions. This study also showed that with an increase in co-dopant concentration, the average grain size of the samples increased. We found that Zn0.96-xCo0.04CexO (x = 0.0, 0.1, 0.2, and 0.4) nanoparticles were ferromagnetic with a Curie temperature above 300 K. In addition, a large increase in ferromagnetism, i.e., high coercivity field, Hc, of 90Oe and remanent magnetization, Mr, of 0.25 × 10−2 emu/g, was observed for Zn0.96-xCo0.04CexO (x = 0.2) nanoparticles. The origins of ferromagnetism may be either due to the intrinsic nature of Co and Ce co-doped samples or to the presence of certain undetected spinel-type impurities in the samples. Also, it was concluded that Co and Ce incorporation are responsible for ferromagnetism in the doped sample. The doping generates oxygen vacancies, which trap charges and cause a rise in F-centers, resulting in exchange interactions with impurity atoms and increased magnetism. All these results showed that co-doped ZnO-based diluted magnetic semiconductors could be considered for spin-based electronics and optoelectronics devices.
Introduction
The doped transition metal (TM) oxides demonstrate great potential as dilute magnetic semiconductors (DMS) of high curie temperatures (Tc) of around 300 K [1, 2]. The discovery of ferromagnetism (FM) in manganese-gallium-arsenide is a milestone [3] because it processes many interesting properties like lasers, electron charging, and hall effect. Moreover, it has many uses in electronic and optoelectronic devices [4,5,6,7,8,9]. It was demonstrated that the incorporation of transition metals in oxide semiconductors could exhibit DMS behavior [10,11,12,13,14,15,16,17,18]. ZnO shows excellent potential in the electronics industry among all oxide semiconductors because of its interesting properties [19, 20]. Another Mn-doped ZnO nanoparticles (NPs) with room temperature ferromagnetic (RTFM) properties were recently reported for the first time [21]. Ghosh et al. [22] studied the changes of leakage currents in Mn-doped ZnO layers. RTFM behavior was reported in Co–ZnO NPs, quantum dots [23], in Fe-doped ZnO [18], and also in (Fe, Co) co-doped ZnO NPs [24]. The saturation magnetization of Co-doped ZnO was observed to be higher when compared with pure ZnO [25]. The same phenomenon was observed by Yan et al. [26] and Lawas et al. [27] and were generally lower when compared to that of co-doped samples. The influence of (co-doped TM ions)-ZnO NPs is not yet properly understood, and experimental results are conflicting. Thus, systematic research is necessary for the comprehension of the origins of magnetism in (Co, Ce)-ZnO compounds. Here, we report the FM behavior of Co and Ce co-doped ZnO diluted semiconducting nanoparticles (NPs) for spintronics applications.
Experimental method
The co-precipitation approach was used to fabricate ZnO, doped Zn0.96Co0.04O, Zn0.95Co0.04Ce0.01O, Zn0.94Co0.04Ce0.02O, and Zn0.92Co0.04Ce0.04O NPs. This was achieved through first dissolving a determined amount of Zinc acetate (99.9%) in 40 ml distilled water followed by adding 25 ml ammonia with agitation as a buffer [28, 29]. Then, the fabricated white precipitates were separated, cleaned with pure water, and dried at 70 °C for 20 h. The dried samples were then annealed at 500 °C for two h in the same furnace. In preparing Co and Ce co-doped NPs, Zinc acetate [Zn (CH3CEO)2⋅H2O], Cerium acetate [Ce (CH3–CEO)2⋅4H2O], and Cobalt acetate [Co (CH3CEO)2⋅4H2O] solutions were slowly added to the prepared precipitate with some agitation for about 5 min.
X-ray diffraction (XRD) using CuKα radiation (λ = 1.5406 Å) was used to determine the structures, and Rietveld refinement was used for calculating lattice parameters and corresponding cell volumes. A transmission scanning electron microscope (TEM) was used to observe particle sizes. Quantum design superconducting quantum interface device (SQUID) was used for studying magnetic properties of the samples.
Result and discussion
The XRD patterns of the fabricated ZnO, Zn0.96Co0.04O, Zn0.95Co0.04Ce0.01O, Zn0.94Co0.04Ce0.02O, and Zn0.92Co0.04Ce0.04O NPs were scanned with a 2θ range of 30–70°, as is shown in Fig. 1b. The XRD shows a wurtzite-type structure for all peaks with a space group of P63mc and secondary phases are absent from the spectra. The ZnO peaks shift to lower angles, and this signifies changes in lattice constants.
The XRD pattern of all the ZnO, Zn0.96Co0.04O, Zn0.95Co0.04Ce0.01O, Zn0.94Co0.04Ce0.02O, and Zn0.92Co0.04Ce0.04O NPs at 300 K confirm the wurtzite-type structure. The (Pure ZnO) Rietveld refinement is shown in Fig. 1a (weighted profile factor RWP = 9.51% and χ2 = 2.571). The lattice parameters, unit cell volumes, and other important parameters are summarized in Table 1, where it can be seen that the lattice parameters and cell volumes increase in Co- and Ce-doped NPs. It is expected since the ionic radii of Co2+ (0.80 Å) and Ce3+ (1.03 Å) are greater than that of Zn2+ (0.60 Å). The peaks move to low angles at a large interplanar spacing in order to satisfy the Bragg’s equation. Figure 1b also confirms that doped Co and Ce atoms are present in the ZnO crystal structure and that the shift in co-doped NPs is larger than in pure ZnO sample. Thus, co-doping enhances the substitution of Ce ions inside the ZnO structure during fabrication. This is achieved through a reduction in the growth rate of ZnO, thereby enhancing Ce ions incorporation. The average crystalline sizes of ZnO, Zn0.96Co0.04O, Zn0.95Co0.04Ce0.01O, Zn0.94Co0.04Ce0.02O, and Zn0.92Co0.04Ce0.04O NPs were estimated using the Scherrer formula and found to be 15–17 nm [30, 31].
Figure 2a–d, shows the Zn, O, Ce, and Co elemental composition (wt.%) in the NPs. The spectra clearly show zinc and oxygen as major elements in pure ZnO, and cobalt and cerium are also present in co-doped ZnO NPs. The weight percent of doped TMs are close to initial concentrations used in NPs fabrication.
Their corresponding TEM images of ZnO, Zn0.96Co0.04O, Zn0.95Co0.04Ce0.01O, and Zn0.92Co0.04Ce0.04O NPs are also shown in Fig. 2a–d. The results show a 16–20 nm particle size range, which matches well with the XRD results.
The magnetic hysteresis loop for Zn0.96Co0.04O, Zn0.95Co0.04Ce0.01O, Zn0.94Co0.04Ce0.02O, and Zn0.92Co0.04Ce0.04O NPs at 300 K is given in Fig. 3a. The M–H loop for un-doped ZnO is diamagnetic [its data are not shown here]. Zn0.96Co0.04O, Zn0.95Co0.04Ce0.01O, Zn0.94Co0.04Ce0.02O, and Zn0.92Co0.04Ce0.04O NPs are ferromagnetic (FM). The remanent magnetization (Mr) were determined to be ∼ 0.2 × 10−2 emu/g, ∼ 0.23 × 10−2 emu/g, 0.25 × 10−2 emu/g, and 0.09 × 10−2 emu/g, and coercive field to be 85O, 64O, 52O, and 32Oe, respectively. The observed Mr value of the Zn0.95Co0.04Ce0.01O specimen is smaller compared to Ref. [25]. The transition from paramagnetic to ferromagnetic state is clearly shown in Fig. 3b. The Mr of Ce-Zn0.96Co0.04O nanoparticles increase with O2 concentration in contrast with the observation in the ZnO sample. O2 annealing can improve the dopant levels of Co and Ce ions into the matrix structure producing more defects. This shows that more Ce ions have been incorporated into the O2 annealed sample, and more defects are produced in the ZnO lattice. The RTFM of Zn0.95Co0.04Ce0.01O NPs can emanate from extrinsic and intrinsic magnetism sources, including forming clusters of transition elements and exchange interactions, respectively.
To explain the magnetic behavior of Zn0.96-xCo0.04CexO, the evolution of magnetism at different temperatures at a magnetic field of 1000 Oe was studied, and the results are shown in Fig. 3b. A 1% Ce co-doped ZnO specimen has high ferromagnetism compared to either single Co or higher Ce co-doped NPs. For example, the Tc of Zn0.95Co0.04Ce0.01O, Zn0.94Co0.04Ce0.02O, and Zn0.92Co0.04Ce0.04O NPs are 331, 398, and 360 K, respectively. This affirms the existence of high-temperature ferromagnetism only for Zn0.94Co0.04Ce0.02O NPs. The coupling between TM ions and polarons may form bound magnetic polarons [32], which is the origin of FM in TM–ZnO [11, 33]. Kittilstved et al. [34] showed that defect-bound carriers induce RTFM in doped ZnO. In this paper, we show that the replacement of Co and Ce into the ZnO lattice can be improved by O2 annealing. RTMF of Zn0.96-xCo0.04CexO nanoparticles is caused by the production of vacancies through doping of Co+2 and Ce2+ for Zn2+ and O2 to maintain a charge balance. This is related to Ce co-doping and O2 annealing introduced during NPs fabrication process. The differential calculation reveals that the Curie temperature of only 4% Co-doped specimen [annealed air at 500 °C] is 317 K, but for 1, 2, and 4% Ce co-doped NPs, their Curie temperatures are 331, 398, and 360 K, as calculated from differentiation magnetization as shown in Fig. 3c. This explains the absence of ferromagnetism at temperatures ≥ 380 K in all NPs except for 2% Ce co-doped. The presence of strong electronic coupling between bound polarons and TM ions forms bound magnetic polarons (BMP) [35] important in the ferromagnetic of TM-doped DMS [36, 37]. It is suggested [37] that defect-bound carriers such as point defects hybridization with magnetic dopants would induce ferromagnetism in TM-doped ODMS. The Curie–Weiss temperature decreases with an increase in Ce substitution. For Zn0.92Co0.04Ce0.04O NPs, the minimum Tc is visible in the M(T) data above 2 K, as displayed in Fig. 3b. In addition, the decrease in the magnetic moment of Co with an increase in dopant concentration may be related to the structural property of Zn0.96-xCo0.04CexO NPs. The changes show that the lattice parameters, hence unit cell volumes, increase with an increase in Co concentration. Such increases in unit cell volumes may increase the distances between the nearest Co ions in the ZnO matrix. This change may lead to antiferromagnetic-type superexchange interactions among neighboring Co ions leading to an increase in a magnetic moment with an increase in Ce concentration as observed. The observed magnetic characteristics at low temperatures may be likely to be either due to the intrinsic behavior emanating from some structural defects created because of the particular synthesis conditions or may be due to the presence of minor impurity phases. Further detailed work may be required for a proper understanding of the mechanism behind this observation.
Summary
In summary, we successfully synthesized ZnO and Zn0.96-xCo0.04CexO (x = 0.0, 0.1, 0.2, and 0.4) nanoparticles by simple chemical precipitation technique. Based on the measurement of X-rays diffraction at room temperature, the structural properties showed the formation of a single-phase Wurtzite structure of ZnO. It was found that the ferromagnetic behavior was observed in Co and Ce co-doped samples, but the high magnetization phase appeared in 2 wt.% Ce co-doped Co–ZnO annealed samples. In contrast, lower magnetization was observed when using higher Ce co-doped concentration. Moreover, the creation of additional charge carriers and O2 vacancies due to (Co, Ce) co-doping likely caused the existence of RTFM. These experimental results show that the enhanced magnetic properties of (Co, Ce) co-doped ZnO is strongly correlated with the increase in oxygen vacancies. These results demonstrate that (Co, Ce) co-doped ZnO samples show tunable RTFM and suggest that O2 annealing vacancies can be a significant way to increase the RTFM.
References
- 1.
G.A. Prinz, Magneto electronics. Science 282, 1660–1663 (1998)
- 2.
W. Prellier, A. Fouchet, B. Mercey, Oxide-diluted magnetic semiconductors: a review of the experimental status. J. Phys. 15, R1583 (2003)
- 3.
A. Stroppa, X. Duan, M. Peressi, Structural and magnetic properties of Co-doped GaAs (1 1 0) surface. Mater. Sci. Eng. 25, 217–221 (2006)
- 4.
Y.Q. Chang, D.B. Wang, X.H. Luo, X.Y. Xu, X.H. Chen, L. Li, C.P. Chen, R.M. Wang, J. Xu, D.P. Yu, Synthesis, optical, and magnetic properties of diluted magnetic semiconductor Zn1−xCoxO nanowires via vapor phase growth. Appl. Phys. Lett. 83, 4020–4022 (2003)
- 5.
Y. Ohno, D.K. Young, B. Beshoten, F. Matsukura, H. Ohno, D.I. Awschalom, Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature 402, 790 (1999)
- 6.
Q. Wang, Q. Sun, P. Jena, Ab initio study of electronic and magnetic properties of the C-Cedoped Ga1—xCoxN (1010) surface. Phys. Rev. B 75, 5322 (2007)
- 7.
C. Klingshirn, Optical properties of bound and localized excitons and of defect states. Phys. Status Solidi B 71, 547–556 (1975)
- 8.
X.Y. Xu, C.B. Cao, Structure and ferromagnetic properties of Ce-doped ZnO powders. J. Magn. Magn. Mater. 321, 2216–2219 (2009)
- 9.
T. Dietl, A ten-year perspective on dilute magnetic semiconductors and oxides. Nat. Mater. 9, 965974 (2010)
- 10.
K. Sato, H.K. Yoshida, Material design for transparent ferromagnets with ZnO-based magnetic semiconductors. Jpn. J. Appl. Phys. 39, L555 (2000)
- 11.
Y. Lin, D. Jiang, F. Lin, W. Shi, M. Xueming, Fe-doped ZnO magnetic semiconductor by mechanical alloying. J. Alloy. Compd. 436, 30–33 (2007)
- 12.
S. Zulfiqarl, M. Zubair, A. Khan, T. Hua, N. Ilyas, S. Fashu, A.M. Afzal, M.A. Safeen, R. Khan, Oxygen vacancies induced room temperature ferromagnetism and enhanced dielectric properties in Co and Mn co-doped ZnO nanoparticles. J. Mater. Sci. 32, 9463–9474 (2021)
- 13.
S.Y. Bae, C.W. Na, J.H. Kang, J. Park, comparative structure and optical properties of Ga-, In-, and Sn-doped ZnO nanowires synthesized via thermal evaporation. J. Phys. Chem. B 109, 2526–2531 (2005)
- 14.
J.G. Wen, J.Y. Lao, D.Z. Wang, T.M. Kyaw, Y.L. Foo, Z.F. Ren, Aberration-corrected transmission electron microscopy for advanced materials characterization. Chem. Phys. Lett. 372, 717–722 (2003)
- 15.
S.A. Wolf, D.D. Awschalom, R.A. Buhrman, J.M. Daughton, M. Svon, M.L. Roukes, A.Y. Chtchelkanova, D.M. Treger, Spintronics: a spin-based electronics vision for the future. Science 294, 1488–1495 (2001)
- 16.
A. Angew, Origin, development, and future of spintronics (nobel lecture). Chem. Int. Ed. 47, 5956–5967 (2008)
- 17.
T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand, Zener model description of ferromagnetism in Zinc-Blende magnetic semiconductors. Science 287, 10191022 (2000)
- 18.
G.Y. Ahn, S.I. Park, C.S. Kim, Enhanced ferromagnetic properties of diluted Fe doped ZnO with hydrogen treatment. J. Magn. Magn. Mater. 303, 329–331 (2006)
- 19.
S.S. Abdullahi, Y. Köseoğlu, S. Güner, S. Kazan, B. Kocaman, C.E. Ndikilar, Synthesis and characterization of Co and Ce co-doped ZnO nanoparticles. Superlattices Microstruct. 83, 342–352 (2015)
- 20.
R. Khan, S. Fashu, Z.U. Rehman, Structural, dielectric and magnetic properties of (Al, Ni) Ce-doped ZnO nanoparticles. J. Mater. Sci. 28, 4333–4339 (2017)
- 21.
Y.M. Hao, S.Y. Lou, S.M. Zhou, R.J. Yuan, G.Y. Zhu, N. Li, Structural, optical, and magnetic studies of manganese-doped zinc oxide hierarchical microspheres by self-assembly of nanoparticles. Nanoscale Res. Lett. 7, 100 (2012)
- 22.
C.K. Ghosh, S. Malkhandi, M.K. Mitra, K.K. Chattopadhyay, Effect of Co doping on the electric and dielectric properties of ZnO epitaxial films. J. Phys. D 41, 245113 (2008)
- 23.
P. Lommens, K. Lambert, F. Loncke, D. De Muynck, T. Balkan, F. Vanhaecke, H. Vrielinck, F. Callens, Z. Hens, The growth of Ce:ZnO/ZnO cere/shell colloidal quantum dots: changes in nanocrystal size, concentration and dopant coordination. Chem. Phys. Chem. 9(3), 484–491 (2008)
- 24.
J.J. Beltran, J.A. Osorio, C.A. Barrero, C.B. Hanna, A. Punnoose, Magnetic properties of Fe doped, Ce doped, and Fe1Ce Ce-doped ZnO. J. Appl. Phys. 113, 17C308 (2013)
- 25.
G. Lawes, A.S. Risbud, A.P. Ramirez, R. Seshadri, Absence of ferromagnetism in Ce and Co substituted polycrystalline ZnO. Phys. Rev. B 71, 045201 (2005)
- 26.
Y. Jiang, W. Yan, Z. Sun, Q. Liu, Z. Pan, T. Yao, Y. Li, Z. Qi, G. Zhang, P. Xu, Z. Wu, S. Wei, Experimental and theoretical investigations on ferromagnetic nature of Co-doped dilute magnetic semiconductors. J. Phys. 190, 012100 (2009)
- 27.
L. Yang, X. Wu, G. Huang, T. Qiu, Y. Yang, In situ synthesis of Co-doped ZnO multileg nanostructures and Co-related Raman vibration. J. Appl. Phys. 97, 014308 (2005)
- 28.
R. Khan, S. Zulfiqar, S. Fashu, M.U. Rahman, Effect of annealing temperature on the dielectric and magnetic response of (Ce, Zn) Ce-doped SnO2 nanoparticles. J. Mater. Sci. 28(3), 2673–2679 (2017). https://doi.org/10.1007/s10854-016-5844-z
- 29.
R. Khan, S. Zulfiqar, Y. Zaman, Effect of annealing on structural, dielectric, transport and magnetic properties of (Zn, Ce) Ce-doped SnO2 nanoparticles. J. Mater. Sci. 27, 4003–4010 (2016). https://doi.org/10.1007/s10854-015-4254-y
- 30.
R. Khan, S. Zulfiqar, S. Fashu, M.U. Rahman, Effects of Ni Ce-doping concentrations on dielectric and magnetic properties of (Ce, Ni) Ce-doped SnO2 nanoparticles. J. Mater. Sci. 27(8), 7725–7730 (2016)
- 31.
R. Khan, S. Zulfiqar, M.U. Rahman, S. Fashu, Z.U. Rehman, Effect of annealing on Ni-doped ZnO nanoparticles synthesized by the Ce-precipitation method. J. Mater. Sci. 28(14), 10122–10130 (2017)
- 32.
C.J. Ceng, L. Liao, Q.Y. Liu, J.C. Li, K.L. Zhang, Effects of temperature on the ferromagnetism of Co-doped ZnO nanoparticles and Co-related Raman vibration. Nanotechnology 17, 1520 (2006)
- 33.
R. Elilarassi, G. Chandrasekaran, Synthesis and characterization of ball milled Fe-doped ZnO diluted magnetic semiconductor. Optoelectron. Lett. 8, 109–112 (2012)
- 34.
K.R. Kittilstved, D.A. Schwartz, A.C. Tuan, S.M. Heald, S.A. Chambers, D.R. Gamelin, Direct kinetic Correlation of carriers and ferromagnetism in Ce2+: ZnO. Phys. Rev. Lett. 97, 037203–037204 (2006)
- 35.
R. Khan, S. Zulfiqar, S. Fashu, M.U. Rahman, Effects of Ni codoping concentrations on dielectric and magnetic properties of (Co, Ni) co-doped SnO2 nanoparticles. J. Mater. Sci. 27, 7725–7730 (2016)
- 36.
J.M.D. Ceey, M. Venkatesan, C.B. Fitzgerald, Donor impurity band exchange in dilute ferromagnetic oxides. Nat. Mater. 4, 173–179 (2005)
- 37.
K.R. Kittilstved, D.A. Schwartz, A.C. Tuan, S.M. Heald, S.A. Chambers, D.R. Gamelin, Direct kinetic correlation of carriers and ferromagnetism in Co2: ZnO. Phys. Rev. Lett. 97, 037203 (2006)
Acknowledgements
We would like to thank Taif University Researchers Supporting Project number (TURSP-2020/241), Taif University, Taif, Saudi Arabia.
Author information
Affiliations
Corresponding authors
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Khan, R., Althubeiti, K., Zulfiqar et al. Structure and magnetic properties of (Co, Ce) co-doped ZnO-based diluted magnetic semiconductor nanoparticles. J Mater Sci: Mater Electron 32, 24394–24400 (2021). https://doi.org/10.1007/s10854-021-06912-4
Received:
Accepted:
Published:
Issue Date: