Two-dimensional electronic devices modulated by the activation of donor-like states in boron nitride

Aftab, Sikandar and Samiya, Samiya and Iqbal, Muhammad Waqas and Shinde, Pragati A. and Rehman, Atteq ur and Yousuf, Saqlain and Park, Sewon and Jun, Seong Chan (2020) Two-dimensional electronic devices modulated by the activation of donor-like states in boron nitride. Nanoscale, 12 (35). pp. 18171-18179. ISSN 2040-3364

Text (Research Article) 53.pdf - Published Version Download (1MB)

Abstract

Two-dimensional (2D) layered materials-based p-n diode is an essential
element in the modern semiconductor industry for facilitating the miniaturization and
structural flexibility of devices with high efficiency for future optoelectronic and electronic
applications. Planar devices constructed previously required a complicated device structure
using a photoresist, as they needed to consider non-abrupt interfaces. Here, we demonstrated
a WSe2 based lateral homojunction diode obtained by applying a photo-induced effect in
BN/WSe2 heterostructures upon illumination via visible and deep UV light, which represents
a stable and flexible charge doping technique. We have discovered that with this technique,
the field-effect transistor (FET) based on p-type WSe2 is inverted to n-WSe2 so that a high
electron mobility is maintained in the h-BN/n-WSe2 heterostructures. To confirm this
hypothesis, we deduce the work function values of p-WSe2 and n-WSe2 FETs by conducting
Kelvin probe force microscopy (KPFM) measurements, which revealed the decline of the
Fermi level from 5.07 (p-WSe2)–4.21 eV (n-WSe2) and help us deduce the contact potential
difference (CPD) between doped and undoped junctions (165 meV). We employ ohmic metal
contacts for the planar homojunction diode by utilizing an ionic liquid gate to achieve a diode
rectification ratio up to ~105 with (n=1). An exceptional photovoltaic performance is also
observed. The presence of a built-in potential in our devices lead to open-circuit voltage
(Voc) and short-circuit current (Isc) without an external electric field. This effective doping
technique is promising to advance the concept of preparing future functional devices.

Item Type:	Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Engineering and Applied Sciences (FEAS) > Department of Basic Sciences Lahore
Depositing User:	Dr. Waqas Iqbal
Date Deposited:	25 Dec 2020 10:27
Last Modified:	25 Dec 2020 10:27
URI:	http://research.riphah.edu.pk/id/eprint/1167

Actions (login required)

View Item