Study of electrical attributes of molybdenum ditelluride (MoTe2) FET using experimental and theoretical evidences

Iqbal, M.W. and Firdous, Faiza and Manzoor, Mumtaz and Ateeq, Hira and Azam, Sikander and Aftab, Sikandar and Kamran, M.A. and Rehman, Altaf ul and Majid, Abdul (2020) Study of electrical attributes of molybdenum ditelluride (MoTe2) FET using experimental and theoretical evidences. Microelectronic Engineering, 230. p. 111365. ISSN 01679317

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Abstract

Two-dimensional (2D) semiconducting TMDCs materials have recently gained
much attention and are considered as promising materials with a high surface-to-volume ratio
for electronics. The performance of devices greatly affected by environmental factors. For
attaining the high performance of the device, environmental issues must be addressed. Here,
we have demonstrated an n-type doping effect from DUV+N2 treatment to overcome the
environmental influences and to enhance the performance of MoTe2 FET. After the n-type
doping effect from DUV+N2 treatment mobility, charge carrier density, and ION/IOFF ratio
increased up to 62.4 cm2/Vs, 3×1012 cm-2 and 107 respectively. The negative shift of threshold
voltage (Vth) and Raman peaks toward the lower wavenumber confirms the n-type doping
effect in the MoTe2 FET from DUV+N2 treatment. By using this method, we can change and
control the polarity of the MoTe2 FET by changing the doping time. First-principles
calculation on the study of structural, electronic and optical properties have been performed
using the density functional theory (DFT) where full-potential linearized augmented plane
wave (FP-LAPW) was used a basis set with generalized gradient approximation plus Hubbard potential (GGA+U) respectively. Furthermore, investigation of electron charge density is
done to analyze the mechanism of structural stability of nitrogen doped MoTe2. DUV+N2
treatment is an effective way to improve the performance of MoTe2 FET.

Item Type:	Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Engineering and Applied Sciences (FEAS) > Department of Basic Sciences Lahore
Depositing User:	Dr. Waqas Iqbal
Date Deposited:	26 Dec 2020 09:37
Last Modified:	26 Dec 2020 09:37
URI:	http://research.riphah.edu.pk/id/eprint/1173

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