Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe2/Gr heterojunction

Elahi, Ehsan and Khan, Muhammad Farooq and Rehman, Shania and Khalil, H. M. Waseem and Rehman, Malik Abdul and Kim, Deok-kee and Kim, Honggyun and Khan, Karim and Shahzad, Moazzam and Iqbal, Muhammad Waqas and Basit, Muhammad Abdul and Khan, Fasihullah (2020) Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe2/Gr heterojunction. Dalton Transactions, 49 (29). pp. 10017-10027. ISSN 1477-9226

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Abstract

Vertical integration of two dimensional (2D) layered materials is indispensable in making van der Waals
(vdWs) heterostructures for promising electronic and optoelectronic devices. Herein, we report excellent
electrical and photoelectrical measurements where the current ON & OFF ratio of FET is increased by
decreasing the temperature in the graphene/ReSe2/graphene heterojunction. We investigated the photoresponsivity
in broad spectral range (UV-Vis-NIR) and achieved high photoresponsivity of 1.5 × 107 AW−1
and external quantum efficiency of ∼64% at λ = 220 nm. Further, the photovoltaic effect was examined,
which significantly modulated the short circuit current (Isc) from 4.2 × 10−8 A to 2.6 × 10−7 A and opencircuit
voltage (Voc) from 0.21 V to 0.44 V at different wavelengths (1064, 840, 514 and 220 nm), attributed
to the photo-generation and recombination rate of the carriers. Moreover, photoresponsivity was
observed near 1.2 × 106, 8.6 × 106 and 1.5 × 107 AW−1 by applying different gate biases (0, 20 and 40 V),
respectively. Further, we have explored the photocurrent and photoresponsivity at different intensities of
incident light (200, 260, 400, 620 and 850 μW cm−2). In addition, we calculated the rise and decay
response times of photodetectors at different wavelengths and power densities, which depend upon the
trap sites in the energy band of ReSe2. These devices opened up new ways to improve the performance
of photodetectors from the UV to the NIR region.

Item Type:	Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Engineering and Applied Sciences (FEAS) > Department of Basic Sciences Lahore
Depositing User:	Dr. Waqas Iqbal
Date Deposited:	26 Dec 2020 09:45
Last Modified:	26 Dec 2020 09:45
URI:	http://research.riphah.edu.pk/id/eprint/1176

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