A facile route to enhance the mobility of MoTe2 field effect transistor via chemical doping

Iqbal, Muhammad Waqas and Elahi, Ehsan and Amin, Aliya and Aftab, Sikandar and Aslam, Imran and Hussain, Ghulam and Shehzad, Muhammad Arslan (2020) A facile route to enhance the mobility of MoTe2 field effect transistor via chemical doping. Superlattices and Microstructures, 147. p. 106698. ISSN 07496036

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Abstract

Modulating electrical characteristics is essential to attain a progressive performance of electronic
devices such as field effect transistors (FETs). Chemical doping is very beneficial technique
which is so simple and cost effective than other methods used in electronic devices for
improvement of electrical characteristics. Here we report the effect of chemical doping with
dopant tetracyanoquinodimethane (TCNQ) for the multilayer (ML)-MoTe2 field effect transistor
(FET) to control its electrical properties. The threshold voltage (Vth) is shifted from negative to
positive back gate voltage which shows p-type doping, furthermore, it was confirmed by Raman
spectroscopy, the peak A1g is shifted towards higher wave number showing p-type doping effect in MoTe2 FET. Moreover, the full width at half maximum (FWHM) is reduced and the intensity
ratio of the characteristic peaks (A1g and E1
2g) is decreased with respect to reaction time. The
electrical measurements revealed improved current on/off ratio from 105 to107, mobility from
26.2 cm2/V. s to 178.73 cm2/V. s and charge carrier density from 3.41x1012 cm-2 to 7.9 × 1012
cm-2. These results offer the possibility of employing MoTe2 FETs in electronics.

Item Type:	Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Engineering and Applied Sciences (FEAS) > Department of Basic Sciences Lahore
Depositing User:	Dr. Waqas Iqbal
Date Deposited:	26 Dec 2020 09:45
Last Modified:	26 Dec 2020 09:45
URI:	http://research.riphah.edu.pk/id/eprint/1181

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