Azam, Sikander Ab-initio study of Cu-based oxychalcogenides: A new class of materials for optoelectronic applications. Journal of Solid State Chemistry.
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Abstract
The Cu-based oxychalcogenides among p-type transparent conducting materials (TCMs) demonstrate significant
results in term of their optoelectronic properties. So, they are being focused on our current study. In this paper, we
reported a detailed analysis relating to the spin-dependent electronic and optical properties of Cu-based
Lanthanide oxychalcogenides materials, ACuOS (A ¼ La, Ce and Pr) by means of Density Functional Theory
(DFT). We observe a decrease in the energy band-gap values for the substitution of lanthanide La→Pr which was
in a fine agreement to the experimental results. The band-gap energy values are concluded to be smaller for the
case of spin up in comparison to spin down case. The majority and minority spin cases of the band structures and
density of states for the three materials are compared and discussed in detail. We also computed spin-dependent
optical parameters like the real and imaginary parts of dielectric function, refractive index, reflectivity, absorption
coefficient and the electron energy loss function for radiations up to energy value of 14 eV. Our investigated
optical parameters for these Cu-based oxychalcogenides reveals dissimilarities for both the spin up and down,
which are the outcomes of the energy band-gap variations and also the existence of additional structures closer to
the Fermi levels which are mostly due to the lanthanides 4f electrons. Their basic material properties including
their crystal structures, optical and electronic properties will be covered, as well as their device applications. Also,
the development of performance enhancement strategies including doping and other innovative ways to improve
performance is still not satisfactory. This has impeded the development of many devices such as photovoltaics,
sensors, and transparent electronics properties of materials
Item Type: | Article |
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Subjects: | Q Science > QC Physics |
Divisions: | Faculty of Engineering and Applied Sciences (FEAS) > Department of Basic Sciences Islamabad |
Depositing User: | Sikander Sikander Azam |
Date Deposited: | 08 Sep 2020 06:34 |
Last Modified: | 08 Sep 2020 06:34 |
URI: | http://research.riphah.edu.pk/id/eprint/228 |
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