Gate-Voltage-Modulated Spin Precession in Graphene/WS2 Field-Effect Transistors

Afzal, Amir Muhammad and Khan, Muhammad Farooq and Eom, Jonghwa (2021) Gate-Voltage-Modulated Spin Precession in Graphene/WS2 Field-Effect Transistors. Electronics, 10 (22). p. 2879. ISSN 2079-9292

Text
10/22/2879
Download (325kB)

Official URL: https://doi.org/10.3390/electronics10222879

Item Type:	Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Engineering and Applied Sciences (FEAS) > Department of Basic Sciences Lahore
Depositing User:	Dr Amir Muhammad Afzal
Date Deposited:	09 Dec 2021 15:40
Last Modified:	09 Dec 2021 15:40
URI:	http://research.riphah.edu.pk/id/eprint/1732

Actions (login required)

View Item

Riphah Research Repository is powered by EPrints 3.4 which is developed by the School of Electronics and Computer Science at the University of Southampton. More information and software credits.